![]() ![]() The role of CMP and planarized wafer associated with lithography patterning is shown in Figure 1 schematically. However, as device shrinkage continues, it has become critical process for device fabrication, and its applications play a pivotal role in semiconductor process since transistor scaling becomes beyond 14 nm. ![]() ![]() The original purpose of CMP is to planarize wafer surface both locally and globally, which enable subsequent lithographic patterning with proper depth of focus. In this chapter, CMP fundamentals, applications and challenges associated with abrasive particle technology including synthesis (up to nanoparticle scale), tribochemical reaction, abrasive surface zeta potential behavior, particle size and its distribution will be discussed.Ĭhemical mechanical polishing (CMP) has been used for several decades in semiconductor manufacturing since its development at 1980s. Hence, to achieve proper CMP performance without surface scratching, understanding and development of abrasive particles are crucially important. Surface scratching, which is generated by CMP in nature, is considered as ‘killer defect’ in semiconductor manufacturing. Moreover, semiconductor yield enhancement is sensitively influenced by CMP processing. The role of CMP is not only material removal, but also planarization, surface smoothening, uniformity control, defect reduction and more. The fundamental mechanism of CMP is to create soften surface layer by chemical reaction and then, mechanical force by abrasive particles remove soften layer. Its importance becomes highly underscored at the advanced device toward sub 14 nm scaling. Chemical mechanical polishing (CMP) is one of the most essential processes in semiconductor manufacturing. ![]()
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